Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays

/, Energy Efficiency, Solid-State Lighting/Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays

Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays

By | 2016-12-02T18:49:18+00:00 November 30th, 2011|Energy, Energy Efficiency, Solid-State Lighting|Comments Off on Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays

EFRC researchers from Sandia recently published an article titled “Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays” in Optics Express. This paper details the development of a two-step top-down process for creating nanorod LED arrays.

Abstract: Vertically aligned InGaN/GaN nanorod light emitting diode (LED) arrays were created from planar LED structures using a new top-down fabrication technique consisting of a plasma etch followed by an anisotropic wet etch. The wet etch results in straight, smooth, well-faceted nanorods with controllable diameters and removes the plasma etch damage. 94% of the nanorod LEDs are dislocation-free and a reduced quantum confined Stark effect is observed due to reduced piezoelectric fields. Despite these advantages, the IQE of the nanorod LEDs measured by photoluminescence is comparable to the planar LED, perhaps due to inefficient thermal transport and enhanced nonradiative surface recombination.