Energy and Climate

Energy & Climate News

Hoboken Hopes To Reduce Power Outages With New ‘Smart Grid’ System

Mayor Says New System Will ‘Keep Everyone Safer Through Next Storm’ HOBOKEN, N.J. (CBSNewYork) – Officials are hoping to reduce power outages during future storms in Hoboken by designing a “smart grid” system using military-inspired technology. The Hudson River came pouring into the streets of Hoboken when Superstorm Sandy struck cutting off road access, putting [...]

Hoboken, New Jersey, Mayor Zimmer Announces Infrastructure Initiatives to Address Flooding, Water, and Power Systems

Hoboken, NJ – Wednesday, May 15th, 2013 Hoboken Mayor Dawn Zimmer announced a partnership with North Hudson Sewerage Authority (NHSA) to build Hoboken’s second wet-weather flood pump in order to alleviate Hoboken’s 200-year flooding problem. The pump, with a capacity of 50 million gallons per day, would further alleviate flooding in Western Hoboken. The City [...]

Sandia Develops a Synthesis of Quantum Dots that Increases the Quantum Yield to 95.5%

White light-emitting diodes (LEDs) based on blue indium-gallium-nitride (InGaN) LEDs that excite yellow-green-emitting yttrium-aluminum-garnet: cerium phosphors (YAG:Ce, a nonhygroscopic, chemically inert inorganic scintillator) have a cold white emission that can be made warmer with the addition of a red-emitting component. Unfortunately, red emitters that satisfy all criteria for use in solid-state lighting (SSL) applications are [...]

Phonon Scattering by Crystallographically Coherent Domain Walls

Sandia staff members Jon Ihlefeld (in the Elec­tronic, Optical, & Nanostructured Materials Dept.) and Stephen Lee (in the Semiconductor Material and Device Sciences Dept.) in collaboration with professors Patrick Hopkins (Univ. of Virginia), Bryan Huey (Univ. of Connecticut), and Darrell Schlom (Cornell Univ.) recently published “Effects of coherent ferroelastic domain walls on the thermal conductivity [...]

Epitaxial Growth of La2O3 on Gallium Nitride and Measuring Band Offsets

Sandians Jon Ihlefeld (in the Electronic, Optical, & Nanostructured Materials Dept.), Mike Brumbach (in the Materials Characterization and Performance Dept.), and Stan Atcitty (in the Energy Storage Technology and Systems Dept.) recently published the article “Band offsets of La2O3 on (0001) GaN grown by reactive molecular-beam epitaxy” in Applied Physics Letters outlining research to prepare [...]

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